MOSFET
900V 4A Enhanced N-Ch Power MOSFET
| Comment | Enhancement |
|---|---|
| Polarity | N |
| BVdss (V) | 900 |
| Id (A) | 4 |
| Rds(on) (Ω) | typ3.7, max 4.2 |
| Qg (nC) | 7 |
| Package | TO-220F |
| status | Mass |
■High Voltage : BVDSS 900 V(Min.)
■Low Crss : Crss 12 pF(Typ.)
■Low gate charge : Qg= 22nC(Typ.)
■Low RDS(on) : RDS(on) 3.7Ω(Typ.)
Cs Cetnter+82 070-4693-2299
Room 505, Incheon IT Tower, 229 Gyeongin-ro, Michuhol-gu, Incheon, Republic of Korea (Dohwa-dong)CEO: Yonghak Lee Tel: +82-070-4693-2299Fax: +82-070-4009-4000Email: yhrhee@apsemi.com
