MOSFET
60V Dual N-Channel Enhancement-Mode MOSFET
| Comment | Enhancement |
|---|---|
| Polarity | N |
| BVdss (V) | 60 |
| Id (A) | 6.5 |
| Rds(on) (Ω) | 0.035 |
| Qg (nC) | 7.2 |
| Package | SOP-8 |
| status | Mass |
"- Lead Free product is acquired
- Logic Level
- Advanced trench process technology
- High Density Cell Design For Ultra Low On-Resistance
- Avalanche Rated
- dv/dt rated
- Green Product (RoHS compliant)
- 150℃ operating temperature"
Cs Cetnter+82 070-4693-2299
Room 505, Incheon IT Tower, 229 Gyeongin-ro, Michuhol-gu, Incheon, Republic of Korea (Dohwa-dong)CEO: Yonghak Lee Tel: +82-070-4693-2299Fax: +82-070-4009-4000Email: yhrhee@apsemi.com
