본문 바로가기

AP반도체

전체메뉴

Fast Recovery Bridge Rectifier

EABS11~EABS16

High Efficiency Bridge Rectifier 100V~600V 1A, Trr 35nS

Specification

VRRM 100V~600V
IF 1A
VF(MAX)@25℃ (V) 0.95V, 1.25V, 1.7V @ 1A
IR(MAX)@Full VR (uA) 5uA
Package ABS
status Mass

Overview

■ Super fast reverse recovery time

■ Low For ward Voltage Drop

■ Glass Passivated Chip Junction

■ Low reverse leakage

■ High surge current capability

■ Low profile package

■ Lead free in comply with EU RoHS 2011/65/EU directives

At the Heart of Global Innovation,
Delivering Semiconductor Solutions
that Shape Tomorrow’s World.

Cs Cetnter+82 070-4693-2299

Room 505, Incheon IT Tower, 229 Gyeongin-ro, Michuhol-gu, Incheon, Republic of Korea (Dohwa-dong)
CEO: Yonghak Lee
Tel: +82-070-4693-2299 | Fax: +82-070-4009-4000 | Email: yhrhee@apsemi.com

© AP Semi. All Right Reserved.