Ultra Low VF Schottky
Ultra Low VF TMOS Schottky
Die | 2 |
---|---|
If | 20A |
Vrrm | 350V |
Vf(Typ.) ,25℃ | 0.75V @ 5A |
Ifsm | 200A |
Ir(Max.) ,25℃ | 65uA |
Package | TO-220F |
status | Mass |
300V 20A Ultra Low VF Schottky
Metal silicon junction, majority carrier conduction
Guarding for overvoltage protection
Low power loss, high efficiency
High current capability, low forward voltage drop
High surge capability
For use in low voltage, high frequency inverters, Free wheeling, and polarity protection application
Plastic package has Underwriters Laboratory Flammability Classification 94V-0
Cs Cetnter+82 070-4693-2299
Room 505, Incheon IT Tower, 229 Gyeongin-ro, Michuhol-gu, Incheon, Republic of Korea (Dohwa-dong)
CEO: Yonghak Lee
Tel: +82-070-4693-2299 | Fax: +82-070-4009-4000 | Email: yhrhee@apsemi.com