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Ultra Low VF Schottky

AD20D300F

Ultra Low VF TMOS Schottky

Specification

Die 2
If 20A
Vrrm 350V
Vf(Typ.) ,25℃ 0.75V @ 5A
Ifsm 200A
Ir(Max.) ,25℃ 65uA
Package TO-220F
status Mass

Overview

300V 20A Ultra Low VF Schottky


 Metal silicon junction, majority carrier conduction

 Guarding for overvoltage protection

 Low power loss, high efficiency

 High current capability, low forward voltage drop

 High surge capability

 For use in low voltage, high frequency inverters, Free wheeling, and polarity protection application

 Plastic package has Underwriters Laboratory Flammability Classification 94V-0

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