MOSFET
600V N-Channel Enhancement-Mode MOSFET
| Comment | Enhancement |
|---|---|
| Polarity | N |
| BVdss (V) | 600 |
| Id (A) | 12 |
| Rds(on) (Ω) | 0.65 |
| Qg (nC) | 38 |
| Package | TO-220F |
| status | Mass |
- Max. RDS(ON) (VGS=10V,ID=6A) = 0.65Ω
- High Power and current handing capability
- Lead Free product is acquired
- Surface Mount Package
SOT-23(TO-236AB) Package Available
Cs Cetnter+82 070-4693-2299
Room 505, Incheon IT Tower, 229 Gyeongin-ro, Michuhol-gu, Incheon, Republic of Korea (Dohwa-dong)
CEO: Yonghak Lee
Tel: +82-070-4693-2299 | Fax: +82-070-4009-4000 | Email: yhrhee@apsemi.com
