MOSFET
20V P-Channel Enhancement-Mode MOSFET
| Comment | Enhancement |
|---|---|
| Polarity | P |
| BVdss (V) | -20 |
| Id (A) | -2.44 |
| Rds(on) (Ω) | 0.07 |
| Qg (nC) | 6.07 |
| Package | SOT-23 |
| status | Mass |
- Max. RDS(ON) (VGS=-4.5V,IDS=-2.8A) = 100mΩ
- Max. RDS(ON) (VGS=-2.5V,IDS=-2.0A) = 150mΩ
- Max. RDS(ON) (VGS=-1.8V,IDS=-2.0A) = 170mΩ
- High Density Cell Design For Ultra Low On-Resistance
- Advanced trench process technology
- General Application
SOT-23(TO-236AB) Package Available
Cs Cetnter+82 070-4693-2299
Room 505, Incheon IT Tower, 229 Gyeongin-ro, Michuhol-gu, Incheon, Republic of Korea (Dohwa-dong)
CEO: Yonghak Lee
Tel: +82-070-4693-2299 | Fax: +82-070-4009-4000 | Email: yhrhee@apsemi.com
