MOSFET
| Comment | Enhancement |
|---|---|
| Polarity | N |
| BVdss (V) | 400 |
| Id (A) | 5.5 |
| Rds(on) (Ω) | 0.9 |
| Qg (nC) | 14 |
| Package | TO-252 |
| status | Mass |
- Low drain-source On resistance : RDS(on) = 0.9Ω (Typ.)
- Low gate charge : Qg = 14nC (Typ.)
- Low reverse transfer capacitance : Crss = 9.5pF (Typ.)
- RoHS compliant device
- 100% avalanche tested
Cs Cetnter+82 070-4693-2299
Room 505, Incheon IT Tower, 229 Gyeongin-ro, Michuhol-gu, Incheon, Republic of Korea (Dohwa-dong)
CEO: Yonghak Lee
Tel: +82-070-4693-2299 | Fax: +82-070-4009-4000 | Email: yhrhee@apsemi.com
