Ultra Low VF Schottky
Ultra Low VF TMOS Schottky
| Die | 2 |
|---|---|
| If | 20A |
| Vrrm | 350V |
| Vf(Typ.) ,25℃ | 0.75V @ 5A |
| Ifsm | 200A |
| Ir(Max.) ,25℃ | 65uA |
| Package | TO-220F |
| status | Mass |
300V 20A Ultra Low VF Schottky
Metal silicon junction, majority carrier conduction
Guarding for overvoltage protection
Low power loss, high efficiency
High current capability, low forward voltage drop
High surge capability
For use in low voltage, high frequency inverters, Free wheeling, and polarity protection application
Plastic package has Underwriters Laboratory Flammability Classification 94V-0
Cs Cetnter070-4693-2299
인천광역시 미추홀구 경인로 229 인천IT타워 505호(도화동) |
대표이사 : 이용학 |
전화 : 070-4693-2299 |
팩스 : 070-4009-4000 |
이메일 : yhrhee@apsemi.com
